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10WT10FNTRR PDF预览

10WT10FNTRR

更新时间: 2024-10-28 07:17:19
品牌 Logo 应用领域
威世 - VISHAY 整流二极管功效
页数 文件大小 规格书
7页 133K
描述
High Performance Generation 5.0 Schottky Rectifier, 10 A

10WT10FNTRR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.66 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:610 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

10WT10FNTRR 数据手册

 浏览型号10WT10FNTRR的Datasheet PDF文件第2页浏览型号10WT10FNTRR的Datasheet PDF文件第3页浏览型号10WT10FNTRR的Datasheet PDF文件第4页浏览型号10WT10FNTRR的Datasheet PDF文件第5页浏览型号10WT10FNTRR的Datasheet PDF文件第6页浏览型号10WT10FNTRR的Datasheet PDF文件第7页 
VS-10UT10, VS-10WT10FN  
www.vishay.com  
Vishay Semiconductors  
High Performance Generation 5.0 Schottky Rectifier, 10 A  
FEATURES  
• 175 °C high performance Schottky diode  
• Very low forward voltage drop  
• Extremely low reverse leakage  
I-PAK(TO-251AA)  
D-PAK(TO-252AA)  
• Optimized VF vs. IR trade off for high efficiency  
Base  
cathode  
4
Base  
cathode  
4
• Increased ruggedness for reverse avalanche  
capability  
• RBSOA available  
2
• Negligible switching losses  
Cathode  
3
3
1
1
• Submicron trench technology  
Anode  
Anode  
Anode  
Anode  
2
Cathode  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
VS-10UT10  
VS-10WT10FN  
PRODUCT SUMMARY  
APPLICATIONS  
I-PAK(TO-251AA),  
D-PAK (TO-252AA)  
• High efficiency SMPS  
• High frequency switching  
• Output rectification  
Package  
IF(AV)  
VR  
10 A  
100 V  
• Reverse battery protection  
• Freewheeling  
VF at IF  
0.66 V  
IRM max.  
TJ max.  
Diode variation  
EAS  
4 mA at 125 °C  
175 °C  
• DC/DC systems  
• Increased power density systems  
Single die  
54 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
100  
UNITS  
V
V
10 Apk, TJ = 125 °C (typical)  
Range  
0.615  
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-10UT10  
VS-10WT10FN  
SYMBOL  
TEST CONDITIONS  
TJ = 25 °C  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 159 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
10  
A
Following any rated load  
condition and with rated  
V
5 μs sine or 3 μs rect. pulse  
610  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
EAS  
IAR  
A
mJ  
A
RRM applied (1)  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 12 mH  
110  
54  
Non-repetitive avalanche energy  
Repetitive avalanche current  
Limited by frequency of operation and time pulse duration  
so that TJ < TJ max. IAS at TJ max. as a function of time pulse  
(see fig. 8)  
IAS at  
TJ max.  
Note  
(1)  
Measured connecting 2 anode pins  
Revision: 02-Nov-11  
Document Number: 94647  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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