5秒后页面跳转
10WT10FN PDF预览

10WT10FN

更新时间: 2024-01-13 20:32:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 152K
描述
High Performance Generation 5.0 Schottky Rectifier, 10 A

10WT10FN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.66 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:610 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

10WT10FN 数据手册

 浏览型号10WT10FN的Datasheet PDF文件第1页浏览型号10WT10FN的Datasheet PDF文件第3页浏览型号10WT10FN的Datasheet PDF文件第4页浏览型号10WT10FN的Datasheet PDF文件第5页浏览型号10WT10FN的Datasheet PDF文件第6页浏览型号10WT10FN的Datasheet PDF文件第7页 
VS-10UT10, VS-10WT10FN  
www.vishay.com  
Vishay Semiconductors  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TYP.  
0.630  
0.735  
0.840  
0.530  
0.615  
0.730  
-
MAX. UNITS  
5 A  
-
10 A  
TJ = 25 °C  
0.810  
20 A  
0.890  
(1)(2)  
Forward voltage drop  
VFM  
V
5 A  
-
10 A  
TJ = 125 °C  
0.660  
0.770  
20 A  
TJ = 25 °C  
TJ = 125 °C  
50  
μA  
mA  
pF  
(1)  
Reverse leakage current  
IRM  
VR = Rated VR  
-
4
Junction capacitance  
CT  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured lead to lead 5 mm from package body  
Rated VR  
400  
8.0  
-
-
Series inductance  
LS  
nH  
Maximum voltage rate of change  
dV/dt  
-
10 000  
V/μs  
Notes  
(1)  
Pulse width < 300 μs, duty cycle < 2 %  
Only 1 anode pin connected  
(2)  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction and  
storage temperature range  
TJ, TStg  
- 55 to 175  
°C  
Maximum thermal resistance,  
junction to case  
RthJC  
RthCS  
DC operation  
2
°C/W  
Typical thermal resistance,  
case to heatsink  
0.3  
0.3  
g
Approximate weight  
Marking device  
0.01  
oz.  
Case style I-PAK  
Case style D-PAK  
10UT10  
10WT10FN  
100  
100  
10  
175 °C  
150 °C  
125 °C  
TJ = 175 °C  
1
100 °C  
75 °C  
50 °C  
10  
0.1  
0.01  
0.001  
TJ = 125 °C  
25 °C  
TJ = 25 °C  
1
0.0001  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
20  
40  
60  
80  
100  
VFM - Forward Voltage Drop (V)  
VR - Reverse Voltage (V)  
Fig. 1 - Maximum Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
Revision: 10-Aug-11  
Document Number: 94647  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与10WT10FN相关器件

型号 品牌 描述 获取价格 数据表
10WT10FNTR VISHAY High Performance Generation 5.0 Schottky Rectifier, 10 A

获取价格

10WT10FNTRL VISHAY High Performance Generation 5.0 Schottky Rectifier, 10 A

获取价格

10WT10FNTRR VISHAY High Performance Generation 5.0 Schottky Rectifier, 10 A

获取价格

10WV03610 SWITCH Interconnection Device,

获取价格

10WV07210 SWITCH Interconnection Device,

获取价格

10WV12010 SWITCH Interconnection Device,

获取价格