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10TQ045STRLPBF PDF预览

10TQ045STRLPBF

更新时间: 2024-11-21 05:57:43
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 126K
描述
Schottky Rectifier, 10 A

10TQ045STRLPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:R-PSSO-G2
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.11Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.49 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1050 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:45 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

10TQ045STRLPBF 数据手册

 浏览型号10TQ045STRLPBF的Datasheet PDF文件第2页浏览型号10TQ045STRLPBF的Datasheet PDF文件第3页浏览型号10TQ045STRLPBF的Datasheet PDF文件第4页浏览型号10TQ045STRLPBF的Datasheet PDF文件第5页浏览型号10TQ045STRLPBF的Datasheet PDF文件第6页 
10TQ...S  
Vishay High Power Products  
Schottky Rectifier, 10 A  
FEATURES  
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
Base  
cathode  
2
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Guard ring for enhanced ruggedness and long term  
reliability  
3
1
D2PAK  
N/C  
Anode  
• Designed and qualified for Q101 level  
DESCRIPTION  
The 10TQ...S Schottky rectifier series has been optimized for  
low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
10 A  
35/45 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
35/45  
tp = 5 µs sine  
10 Apk, TJ = 125 °C  
Range  
1050  
A
VF  
0.49  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
10TQ035S  
10TQ045S  
UNITS  
Maximum DC reverse voltage  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 151 °C, rectangular waveform  
10  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 µs sine or 3 µs rect. pulse  
1050  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 6.5 mH  
280  
13  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Document Number: 93943  
Revision: 25-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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