10TQ...S
Vishay High Power Products
Schottky Rectifier, 10 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
Base
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
3
1
D2PAK
N/C
Anode
• Designed and qualified for Q101 level
DESCRIPTION
The 10TQ...S Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV)
10 A
35/45 V
VR
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
10
UNITS
Rectangular waveform
A
V
35/45
tp = 5 µs sine
10 Apk, TJ = 125 °C
Range
1050
A
VF
0.49
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
10TQ035S
10TQ045S
UNITS
Maximum DC reverse voltage
35
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 151 °C, rectangular waveform
10
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated
load condition and with
rated VRRM applied
5 µs sine or 3 µs rect. pulse
1050
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 2 A, L = 6.5 mH
280
13
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
Document Number: 93943
Revision: 25-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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