Datasheet > 10TQ045-1

10TQ045-1

更新时间： 2023-02-26 14:48:42

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	193K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-262AA, TO-262, 3 PIN

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10TQ045-1 数据手册

10TQ... Series

Bulletin PD-2.057 rev. D 08/00

Voltage Ratings

Part number

10TQ035

10TQ040

10TQ045

V_R

Max. DC Reverse Voltage (V)

_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

10TQ Units

Conditions

I_F(AV)Max.AverageForwardCurrent

*SeeFig.5

50%dutycycle@T_C=151°C,rectangularwaveform

Following any rated

load condition and

I_FSMMax.PeakOneCycleNon-Repetitive

SurgeCurrent *SeeFig.7

1050

280

5µs Sineor3µsRect.pulse

10msSineor6msRect. pulse

with rated V_RRMapplied

E_ASNon-RepetitiveAvalancheEnergy

T_J=25°C, I_AS=2Amps,L=6.5mH

Currentdecayinglinearlytozeroin1µsec

FrequencylimitedbyT_Jmax.V_A=1.5xV_Rtypical

I_AR

RepetitiveAvalancheCurrent

Electrical Specifications

Units

Parameters

10TQ

Conditions

V_FMMax. Forward Voltage Drop

* See Fig. 1

(1)

0.57

0.67

0.49

0.61

@ 10A

@ 20A

@ 10A

@ 20A

T_J= 25 °C

T_J= 125 °C

I_RMMax. Reverse Leakage Current (1)

* See Fig. 2

T_J= 25 °C

T_J= 125 °C

V_R= rated V_R

C_T

L_S

Max. Junction Capacitance

Typical Series Inductance

900

8.0

V_R= 5V_DC, (test signal range 100Khz to 1Mhz) 25 °C

Measured lead to lead 5mm from package body

dv/dt Max. Voltage Rate of Change

(Rated V_R)

10,000 V/ µs

(1) Pulse Width < 300µs, Duty Cycle < 2%

Thermal-Mechanical Specifications

Parameters

10TQ Units

Conditions

T_J

Max.JunctionTemperatureRange

-55to175 °C

T_stgMax.StorageTemperatureRange

R_thJCMax.ThermalResistanceJunction

toCase

2.0

°C/W DCoperation *SeeFig.4

R_thCSTypicalThermalResistance,Caseto

Heatsink

0.50

°C/W Mountingsurface,smoothandgreased

ApproximateWeight

MountingTorque

2(0.07) g(oz.)

Min.

Max.

6(5)

Kg-cm

(Ibf-in)

12(10)

www.irf.com

123 4 5 6

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