Datasheet > 10N60F

10N60F

更新时间： 2024-11-30 14:54:43

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
6页	833K
描述
场效应晶体管

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10N60F 数据手册

10N60F

Silicon N-Channel Power MOSFET

FEATURES



Fast Switching



ESD Improved Capability

ow Gate Charge (Typical Data:38nC)

Low Reverse transfer capacitances(Typical:15pF)

100% Single Pulse avalanche energy Test

APPLICATIONS



Power switch circuit of adaptor and charger.

ITO-220AB

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GS

Parameter

Value

600

Units

Drain-to-Source voltage

Gate -Source voltage

±30

Continuous Drain current

I_D

Continuous Drain current Tc=100°C

6.4

I_DM

Pulsed Drain current

dv/dt^a3

P_D

Peak Diode Recovery dv/dt

5.0

V/ns

Power Dissipation

V_ESD(G-S)

Gate source ESD(HBM-C=100pF,R=1.5kΩ)

4000

150，-55 to +150

℃

T_J,T_stg

T_L

Operating Junction and StorageTemperature

Maximum Temperature for Soldering

300

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mail:lge@lgesemi.com

Revision:20170701-P1

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