VS-10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
DESCRIPTION/FEATURES
Base cathode
2
The VS-10ETS..SPbF rectifier series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
Vishay HPP switches and output rectifiers which
are available in identical package outlines.
1
3
Anode
Anode
D2PAK
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRODUCT SUMMARY
VF at 10 A
< 1 V
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
IFSM
200 A
VRRM
800 V/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
12.0
16.0
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
10
UNITS
Sinusoidal waveform
A
V
800/1200
200
A
VF
10 A, TJ = 25 °C
1.1
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
V
RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-10ETS08SPbF
VS-10ETS10SPbF
VS-10ETS12SPbF
800
1000
1200
900
1100
1300
0.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
10
170
200
130
145
1450
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
A2s
Maximum I2√t for fusing
I2√t
A2√s
Document Number: 94338
Revision: 08-Apr-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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