10CTQ150S/10CTQ150-1
Vishay High Power Products
Schottky Rectifier, 2 x 5 A
FEATURES
10CTQ150-1
10CTQ150S
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
2
2
DESCRIPTION
Anode
Anode
Anode
Anode
Common
cathode
Common
cathode
3
3
1
1
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
D2PAK
TO-262
PRODUCT SUMMARY
IF(AV)
2 x 5 A
150 V
VR
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
10
UNITS
Rectangular waveform
A
V
150
tp = 5 µs sine
620
A
VF
5 Apk, TJ = 125 °C (per leg)
Range
0.73
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
10CTQ150S
10CTQ150-1
SYMBOL
UNITS
Maximum DC reverse voltage
VR
150
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
5
IF(AV)
50 % duty cycle at TC = 155 °C, rectangular waveform
A
per device
10
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Following any rated load
condition and with rated
VRRM applied
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
620
IFSM
A
115
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 0.30 A, L = 150 mH
6.75
mJ
A
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.30
Document Number: 93942
Revision: 06-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1