Datasheet > 10BQ0100PBF

10BQ0100PBF

更新时间： 2023-11-02 19:28:50

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	330K
描述
Rectifier device Schottky Diode

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中文翻译

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数据手册

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10BQ0100PBF 数据手册

10BQ030PBF - 10BQ100PBF

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 30 - 100V

CURRENT: 1.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA(DO-214AC)

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Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

10BQ030PBF

10BQ040PBF 10BQ060PBF 10BQ100PBF Unit

Characteristic

Symbol

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current @T_L= 75°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

0.50

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage @T = 100°C

@T_A= 25°C

0.5

ꢀ

Typical Thermal Resistance (Note 1)

°C/W

ꢀ

Operating Temperature Range

Storage Temperature Range

-65 to +125

-65 to +150

°C

STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

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