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10A05 PDF预览

10A05

更新时间: 2024-01-12 05:03:02
品牌 Logo 应用领域
NAINA 二极管IOT
页数 文件大小 规格书
2页 124K
描述
Silicon Rectifier, 10.0A

10A05 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5.68
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

10A05 数据手册

 浏览型号10A05的Datasheet PDF文件第2页 
10A05 - 10A10  
Naina Semiconductor Ltd.  
Silicon Rectifier, 10.0A  
Features  
Diffused junction  
Low cost  
Low reverse leakage current  
High current capability & low forward voltage drop  
Plastic material carrying UL recognition 94V-0  
Polarity: Color Band denotes Cathode  
Lead free finish  
Thermal and Mechanical Specifications (TA = 250C unless otherwise  
specified)  
Symbol  
Values  
Units  
Parameters  
Maximum operating junction  
temperature range  
- 55 to +  
125  
TJ  
0C  
Maximum storage temperature  
range  
- 55 to +  
150  
TStg  
0C  
Typical thermal resistance junction  
to ambient  
JEDEC R-6  
RθJA  
W
10  
0C/W  
g
Approximate weight  
2.1  
Electrical Characteristics (TA = 250C unless otherwise specified)  
Parameter  
Symbol  
Units  
10A05 10A1 10A2 10A4 10A6 10A8 10A10  
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward output  
current @ TA = 500C  
IF(AV)  
10  
600  
1.0  
A
Peak forward surge current (8.3ms)  
single half sine-wave superimposed  
on rated load  
IFSM  
A
Maximum DC forward voltage drop  
per element @ 10 A  
VF  
CJ  
V
Typical junction capacitance  
150  
10  
pF  
TA = 250C  
Maximum DC reverse  
current at rated DC  
blocking voltage  
IR  
µA  
TA = 1000C  
100  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
Fax: 0120-4273653  
sales@nainasemi.com  
• www.nainasemi.com  

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