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10A05-10A10 PDF预览

10A05-10A10

更新时间: 2024-11-24 01:24:31
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
4页 1519K
描述
R-6 Plastic-Encapsulate Diodes

10A05-10A10 数据手册

 浏览型号10A05-10A10的Datasheet PDF文件第2页浏览型号10A05-10A10的Datasheet PDF文件第3页浏览型号10A05-10A10的Datasheet PDF文件第4页 
10A05 THRU 10A10  
HD ZC150  
R-6 Plastic-Encapsulate Diodes  
Features  
I  
10A  
o
R-6  
VRRM  
50V-1000V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
10AX  
X:From 05 to 10  
10A  
4
Item  
Symbol  
Unit  
Conditions  
05  
1
2
6
8
10  
VRRM  
V
50  
100 200 400 600 800 1000  
Repetitive Peak Reverse Voltage  
35  
70 140 280 420 560  
700  
V
V
RMS  
Maximum RMS Voltage  
60Hz Half-sine wave, Resistance  
load, Ta=50  
IF(AV)  
A
A
Average Forward Current  
10  
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave,1 cycle,  
Ta=25℃  
IFSM  
600  
TJ  
-55~+125  
Junction Temperature  
Storage Temperature  
TSTG  
-55 ~ +150  
Item  
Symbol  
Unit  
Test Condition  
Max  
VFM  
IFM=10.0A  
V
1
Peak Forward Voltage  
Peak Reverse Current  
IRRM1  
IRRM2  
T =25  
5
a
μA  
VRM=VRRM  
T =125℃  
50  
a
Rθ  
10  
Between junction and ambient  
Between junction and lead  
J-A  
Thermal  
Resistance(Typical)  
/W  
Rθ  
2.5  
J-L  
1
H
igh Diode Semiconductor  

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