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10A05 PDF预览

10A05

更新时间: 2024-11-25 07:24:39
品牌 Logo 应用领域
EIC 整流二极管IOT
页数 文件大小 规格书
2页 36K
描述
SILICON RECTIFIER DIODES

10A05 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliant风险等级:5.6
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:10 µA表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

10A05 数据手册

 浏览型号10A05的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
10A01-10A07  
D6  
PRV : 50 - 1000 Volts  
Io : 10 Amperes  
1.00 (25.4)  
0.360 (9.1)  
MIN.  
FEATURES :  
* Diffused Junction  
0.340 (8.6)  
* High current capability and Low Forward  
Voltage Drop  
0.360 (9.1)  
0.340 (8.6)  
* Surge Overload Rating to 600A Peak  
* Low Reverse Leakage Current  
* Pb / RoHS Free  
1.00 (25.4)  
0.052 (1.32)  
MIN.  
0.048 (1.22)  
MECHANICAL DATA :  
* Case : molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 2.049 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
10A01 10A02 10A03 10A04 10A05 10A06 10A07  
SYMBOL  
UNIT  
VRRM  
VRMS  
VDC  
IO  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
10  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
Maximum DC Blocking Voltage  
100  
1000  
V
Average Rectified Output Current (Note 1) Ta = 50°C  
Non-Repetitive Peak Forward Surge Current 8.3 ms  
Single half sine wave superimposed on rated load  
(JEDEC Method)  
A
IFSM  
600  
A
VF  
IR  
Maximum Forward Voltage at IF = 10 Amps.  
1.3  
10  
V
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
mA  
mA  
pF  
IR(H)  
100  
Ta = 100 °C  
150  
80  
Typical Junction Capacitance (Note 2)  
Thermal Resistance  
Cj  
RqJC  
0.8  
°C/W  
°C  
TJ, TSTG  
Operating and Storage Temperature Range  
- 65 to + 150  
Notes :  
(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.  
(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.  
Page 1 of 2  
Rev. 01 : October 27, 2005  

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