1011LD110B

更新时间： 2024-09-18 06:16:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		脉冲电子航空
页数	文件大小	规格书
5页	220K
描述
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

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1011LD110B 数据手册

1011LD110B

110 Watts, 32 Volts

Pulsed Avionics 1030 to 1090 MHz

LDMOS FET

GENERAL DESCRIPTION

The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral

MOSFET capable of providing 110W_pkof RF power from 1030MHz to 1090 MHz.

The device is nitride passivated and utilizes gold metallization to ensure highest

MTTF. The transistor includes input and output prematch for broadband capability.

Low thermal resistance package reduces junction temperature, extends life.

Integrated ESD protection makes the device robust.

CASE OUTLINE

55QT

(Common Source)

ABSOLUTE MAXIMUM RATINGS

Voltage and Current

Drain-Source (V_DSS

Gate-Source (V_GS,V_DS=0)

)

+65V

+20V

Temperatures

Storage Temperature

-65 to +150°C

+100°C

Operating Case Temperature¹

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

V_GS= 0V, I_D= 2mA

Drain-Source Leakage Current V_DS= 32V, V_GS= 0V

MIN TYP MAX UNITS

BV_DSS

I_DSSF

Drain-Source Breakdown

µA

I_GSSF

Gate-Source Leakage Current

Gate Threshold Voltage

Drain-Source On Voltage

Forward Transconductance

Thermal Resistance

V_GS= 10V, V_DS= 0V

V_DS= 10V, I_D= 3mA

V_GS= 10V, I_D= 1A

V_DS= 10V, I_D= 1A

V_GS(TH)

V_DS(ON)

g_FS

0.25

2.2

0.12

0.5

ºC/W

θ_JC

FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, I_DQ= 250mA

G_PS

Common Source Power Gain

Pulse Droop

Pulse width = 32ꢀs, LTDC=2%,

13.5 14.5

110

F=1030/1090 MHz, P_out= 110W

Output Power at 1dB Gain

Compression

Pulse width = 32ꢀs, LTDC=2%,

F=1030/1090 MHz

P_1dB

η_D

Drain Efficiency

Load Mismatch

F = 1030 MHz, P_out= 110W

F = 1090 MHz, P_out= 110W

5:1

NOTES: 1. At rated output power and pulse conditions

2. Pulse Format 1: 32µs, 2% Long Term Duty Factor

3. Pulsed Bias: I_DQ-PULSED= 6.5mA (@ 42us ON, 1.6msec)

Rev. 0 – Apr. 2007

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

12 3 4 5

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