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100NT3

更新时间: 2024-11-28 12:20:51
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NAINA /
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描述
Non-isolated Thyristor Module

100NT3 数据手册

 浏览型号100NT3的Datasheet PDF文件第2页 
100NT3  
Naina Semiconductor Ltd.  
Non-isolated Thyristor Module  
Features  
Low voltage three-phase  
High surge current of 2500A @ 60Hz  
Easy construction  
Non-isolated  
Mounting base as common anode  
Voltage Ratings (TC = 25OC unless otherwise specified)  
Parameter  
Symbol  
Values  
Units  
Maximum repetitive peak  
reverse voltage  
VRRM  
300  
V
Maximum non-repetitive  
peak reverse voltage  
VRSM  
VDRM  
360  
300  
V
V
Maximum repetitive peak  
off-state voltage  
NT3  
Electrical Characteristics (TC = 25OC unless otherwise specified)  
Parameter  
Conditions  
Symbol  
IT(AV)  
Values  
100  
Units  
Single phase, half-wave, 1800  
Average on-state current  
R.M.S. on-state current  
A
A
conduction @ TC = 1160C  
IT(RMS)  
157  
half cycle, 50Hz/60Hz, peak value,  
non-repetitive  
On-state surge current  
ITSM  
3300  
A
I2t required for fusing  
I2t  
51500  
A2S  
W
W
A
Peak gate power dissipation  
Average gate power dissipation  
Peak gate current  
PGM  
10  
1
PGM(AV)  
IGM  
3
Peak gate voltage (forward)  
Peak gate voltage (reverse)  
VFGM  
VRGM  
10  
5
V
V
I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1  
A/µs  
Critical rate of rise of on-state current  
di/dt  
50  
A/µs  
TJ = 1500C, V0 = 2/3 VDRM , exponential  
wave  
Critical rate of rise of off-state voltage  
Holding current  
dv/dt  
IH  
50  
70  
V/µs  
mA  
Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified)  
Parameter  
Symbol  
TJ  
Values  
-30 to +150  
-30 to +125  
0.30  
Units  
0C  
0C  
Operating junction temperature range  
Storage temperature range  
Thermal resistance, junction to case  
TSTG  
Rth(JC)  
0C/W  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
• Fax: 0120-4273653  
sales@nainasemi.com  
www.nainasemi.com  

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