Datasheet > 100NTT

100NTT

更新时间： 2024-09-18 12:50:15

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	140K
描述
Thyristor - Diode Module

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100NTT 数据手册

100NTT

Naina Semiconductor Ltd.

Thyristor – Thyristor Module

Features

•

Improved glass passivation for high reliability

Exceptional stability at high temperatures

High di/dt and dv/dt capabilities

Low thermal resistance

Available in both M1 & M2 package

Maximum Ratings (T_A= 25⁰C unless otherwise noted)

Parameter

Symbol

I_F(AV)

I_F(RMS)

I_FSM

Values

Units

Maximum average forward current @ T_J=

85⁰C

100

Maximum average RMS forward current

220

Maximum non-repetitive surge current @ t

= 10ms

Maximum I²t for fusing @ t = 10ms

2000

I²t

kA²s

M1 & M2 PACKAGE

Thermal & Mechanical Specifications (T_A= 25⁰C unless otherwise noted)

Parameter

Symbol

Values

-65 to +125

1.1

Units

⁰C

⁰C/W

Operating junction temperature range

Thermal resistance, junction to case

T_J

R_th(JC)

Electrical Characteristics (T_A= 25⁰C unless otherwise noted)

Parameter

Symbol

I_T(max)

V_RRM

V_FM

Values

100

Units

Maximum average on-state current

Maximum repetitive peak reverse voltage range

Forward voltage drop

200 to 1600

1.55

Gate current required to trigger

Gate voltage required to trigger

Holding current range

I_GT

100

V_GT

I_H

5 to 100

400

V/µs

Maximum latching current

Critical rate of rise of off-state voltage

RMS isolated voltage

I_L

dv/dt

V_ISO

300

2500

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

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