Datasheet > 100N3LF3

100N3LF3

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	435K
描述
N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET

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100N3LF3 数据手册

Electrical characteristics

STD100N3LF3 - STU100N3LF3

Figure 13. Allowable Iav vs time in avalanche

The previous curve gives the single pulse safe operating area for unclamped inductive

loads, under the following conditions:

= 0.5 * (1.3 * BV

)

D(AVE)

AS(AR)

DSS AV

= P

* t

D(AVE)

Where:

is the allowable current in avalanche

is the average power dissipation in avalanche (single pulse)

D(AVE)

is the time in avalanche

8/15

1...5 6 789 10 11...15

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