Datasheet > 100NDD

100NDD

更新时间： 2024-11-28 07:24:11

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	129K
描述
Diode – Diode Module

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100NDD 数据手册

100NDD

Naina Semiconductor Ltd.

Diode – Diode Module

Features

•

Improved glass passivation for high reliability

Exceptional stability at high temperatures

High di/dt and dv/dt capabilities

Low thermal resistance

Available in both M1 and M2 package

Maximum Ratings (T_A= 25⁰C unless otherwise noted)

Parameter

Symbol

Values

Units

Maximum average forward

current @ T_J= 85⁰C

I_F(AV)

100

Maximum average RMS

forward current

I_F(RMS)

I_FSM

I²t

157

2000

Maximum non-repetitive

surge current @ t = 10ms

Maximum I²t for fusing @ t =

kA²s

10ms

M1 & M2 PACKAGE

Thermal & Mechanical Specifications (T_A= 25⁰C unless otherwise noted)

Parameter

Symbol

Values

-65 to +125

0.35

Units

⁰C

Operating junction temperature range

Thermal resistance, junction to case

T_J

R_th(JC)

⁰C/W

Electrical Characteristics (T_A= 25^OC unless otherwise noted)

Parameter

Symbol

Values

100

Units

Maximum average on-state current, 180⁰C sinusoidal

Maximum repetitive peak reverse voltage range

Forward voltage drop

I_T(max)

V_RRM

V_FM

200 to 1600

1.35

RMS isolation voltage

V_ISO

2500

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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