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100331

更新时间： 2024-02-08 10:55:12
品牌 Logo 应用领域
美国国家半导体 - NSC 触发器
页数 文件大小 规格书
8页 153K
描述
Low Power Triple D Flip-Flop

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100331 技术参数

生命周期：Contact Manufacturer包装说明：QFF,
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.59Is Samacsys：N
系列：100KJESD-30 代码：S-GQFP-F24
长度：9.398 mm逻辑集成电路类型：D FLIP-FLOP
位数：1功能数量：3
端子数量：24最高工作温度：125 °C
最低工作温度：-55 °C输出特性：OPEN-EMITTER
输出极性：COMPLEMENTARY封装主体材料：CERAMIC, GLASS-SEALED
封装代码：QFF封装形状：SQUARE
封装形式：FLATPACK传播延迟（tpd）：2.4 ns
筛选级别：MIL-PRF-38535 Class V座面最大高度：2.159 mm
表面贴装：YES技术：ECL
温度等级：MILITARY端子形式：FLAT
端子节距：1.27 mm端子位置：QUAD
触发器类型：POSITIVE EDGE宽度：9.398 mm
最小 fmax：400 MHzBase Number Matches：1

100331 数据手册

 浏览型号100331的Datasheet PDF文件第1页浏览型号100331的Datasheet PDF文件第2页浏览型号100331的Datasheet PDF文件第4页浏览型号100331的Datasheet PDF文件第5页浏览型号100331的Datasheet PDF文件第6页浏览型号100331的Datasheet PDF文件第7页 
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Input Voltage (DC)  
Output Current  
(DC Output HIGH)  
ESD (Note 2)  
VEE to +0.5V  
−50 mA  
≤ 2000V  
Above which the useful life may be impaired  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
Maximum Junction Temperature (TJ)  
Ceramic  
+175˚C  
Pin Potential to  
−55˚C to +125˚C  
−5.7V to −4.2V  
Ground Pin (VEE  
)
−7.0V to +0.5V  
Supply Voltage (VEE  
)
Note 1: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Military Version  
DC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C  
Symbol  
VOH  
Parameter  
Min  
Max  
Units  
TC  
Conditions  
Notes  
=
Output HIGH Voltage  
−1025  
−870  
mV  
0˚C to  
VIN VIH  
Loading with  
(Notes 3,  
4, 5)  
(Max)  
50Ω to −2.0V  
+125˚C  
−55˚C  
or VIL (Min)  
−1085  
−1830  
−870  
mV  
mV  
VOL  
Output LOW Voltage  
Output HIGH Voltage  
Output LOW Voltage  
−1620  
0˚C to  
+125˚C  
−55˚C  
−1830  
−1035  
−1555  
mV  
mV  
=
VOHC  
0˚C to  
VIN VIH  
Loading with  
(Notes 3,  
4, 5)  
(Min)  
50Ω to −2.0V  
+125˚C  
−55˚C  
or VIL (Max)  
−1085  
mV  
mV  
VOLC  
−1610  
0˚C to  
+125˚C  
−55˚C  
−1555  
−870  
mV  
mV  
VIH  
VIL  
IIL  
Input HIGH Voltage  
Input LOW Voltage  
Input LOW Current  
Input HIGH Current  
−1165  
−1830  
0.50  
−55˚C to  
+125˚C  
−55˚C to  
+125˚C  
−55˚C to  
+125˚C  
0˚C to  
Guaranteed HIGH Signal  
for all Inputs  
(Notes 3,  
4, 5, 6)  
−1475  
mV  
µA  
µA  
Guaranteed LOW Signal  
for all Inputs  
(Notes 3,  
4, 5, 6)  
=
VEE −4.2V  
(Notes 3,  
4, 5)  
=
VIN VIL (Min)  
=
IIH  
240  
VEE −5.7V  
(Notes 3,  
4, 5)  
=
VIN VIH (Max)  
+125˚C  
−55˚C  
340  
−50  
µA  
IEE  
Power Supply Current  
−130  
mA  
−55˚C to  
+125˚C  
Inputs Open  
(Notes 3,  
4, 5)  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups, 1, 2, 3, 7 and 8.  
Note 5: Sampled tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7 and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
3
www.national.com  
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