Datasheet > 10-TY12NMB030SM01-L394L18

10-TY12NMB030SM01-L394L18

更新时间： 2024-10-29 11:16:07

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
21页	6843K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-TY12NMB030SM01-L394L18 数据手册

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10-TY12NMB030SM01-L394L18

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

2,37

2,35

2,62⁽¹⁾

V_F

I_R

Forward voltage

150

Reverse leakage current

V_r= 1200 V

µA

150

2700

5500

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,34

K/W

21,61

34,06

38,62

173,59

251,86

271,81

1,65

I_RM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=3209 A/µs

di/dt=2031 A/µs

di/dt=2003 A/µs

Q_r

Recovered charge

-5/15

350

125

150

3,28

μC

3,98

0,303

0,724

0,899

423,07

743,05

879,72

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

28 Oct. 2022 / Revision 2

1...3 4 567 8 9...21

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