Datasheet > 10-R112PNA015M7-P639C75

10-R112PNA015M7-P639C75

更新时间： 2023-09-03 20:35:09

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	6853K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-R112PNA015M7-P639C75

datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

V_GE

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

_CE(V)

V_CE(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

15,0

12,5

10,0

7,5

-1

5,0

0,5

0,2

0,1

-2

0,05

0,02

0,01

0,005

2,5

-3

0,0

-5

-4

-3

-2

-1

2,5

5,0

7,5

10,0

12,5

t_p(s)

_GE(V)

t_p

250

μs

D =

t_p/ T

1,595

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

4,90E-02

1,40E-01

8,04E-01

2,98E-01

1,69E-01

1,35E-01

4,40E+00

5,34E-01

8,02E-02

2,57E-02

5,09E-03

6,41E-04

21 Dec. 2022 / Revision 1

1...4 5 678 9 10...20

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