Datasheet > 10-PY096PA035ME-L224F18Y

10-PY096PA035ME-L224F18Y

更新时间： 2023-09-03 20:39:28

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	7591K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PY096PA035ME-L224F18Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Inverter Switch

Static

39⁽¹⁾

r_DS(on)

Drain-source on-state resistance

125

150

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Gate charge

0,01

1,7

2,4

3,5

500

200

µA

Ω

900

400

600

2,35

60,8

Q_g

Q_GS

Q_GD

C_iss

C_oss

C_rss

V_SD

Gate to source charge

-4/15

Gate to drain charge

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Diode forward voltage

1320

120

f = 1 Mhz

4,8

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,25

K/W

30 Nov. 2021 / Revision 2

1 234 5 6 7...17

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