Datasheet > 10-PY096PA035ME-L224F18Y

10-PY096PA035ME-L224F18Y

更新时间： 2023-09-03 20:39:28

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	7591K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PY096PA035ME-L224F18Y

datasheet

Inverter Switch Characteristics

figure 5.

MOSFET

figure 6.

MOSFET

Safe operating area

Gate voltage vs gate charge

I_D= f(V_DS

)

V_GS= f(Q_g)

1000

17,5

15,0

12,5

10,0

7,5

100

5,0

2,5

0,0

0,1

0,01

-2,5

-5,0

100

1000

10000

_DS(V)

Q_g(μC)

D =

I_D

single pulse

T_s=

T_j=

°C

V_GS

T_j=

T_jmax

30 Nov. 2021 / Revision 2

1...4 5 678 9 10...17

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