Datasheet > 10-PG07N3A030S5-M894F96T

10-PG07N3A030S5-M894F96T

更新时间： 2023-09-03 20:33:56

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	3886K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

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10-PG07N3A030S5-M894F96T

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,0003 25

3,2

4,8

1,35

1,54

1,57

1,75

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

µA

100

none

1800

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

520

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

1,55

K/W

Dynamic

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

R_goff= 16 Ω

R_gon= 16 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

125

150

125

150

125

150

104

107

0,397

0,505

0,639

0,224

0,363

0,374

±15

350

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 1,1 μC

= 1,9 μC

= 2,1 μC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

E_off

04 Jun. 2019 / Revision 1

1 2 345 6 7...32

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