Datasheet > 10-PG07N3A050S5-M896F96T

10-PG07N3A050S5-M896F96T

更新时间： 2023-09-03 20:33:58

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	9039K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

10-PG07N3A050S5-M896F96T 数据手册

10-PG07N3A050S5-M896F96T

datasheet

flow3xNPC 1

650 V / 50 A

Features

flow 1 12 mm housing

● Four quadrant operation

● Enhanced thermal performance

● Fast switching IGBTs

Schematic

Target applications

● Solar Inverters

● UPS

Types

● 10-PG07N3A050S5-M896F96T

05 Sep. 2021 / Revision 2

12 3 4 5 6 7...29

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
10-PG07ORA100RO-LJ51I48T	VINCOTECH	获取价格	SiC diode No diode recovery losses Very fast switching
10-PG07ORA160RF-LJ53I88T	VINCOTECH	获取价格	Low diode recovery losses;Low reverse recovery time and recovery charge;Designed for high
10-PG123BA080SH01-LN68L38T	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PG123BA080SH11-LN68L33T	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PG123BA080SH21-LN68L18T	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PG126PA010MR-L820F88T	VINCOTECH	获取价格	Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
10-PG12APA015SH01-PB18E08T	VINCOTECH	获取价格	Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optim
10-PG12NAB008ME-LC59F66T	VINCOTECH	获取价格	High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech
10-PG12NAB008MR02-LC59F36T	VINCOTECH	获取价格	Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
10-PG12NAB008MR04-LC59F46T	VINCOTECH	获取价格	Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode