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10-PG12NAB008ME-LC59F66T PDF预览

10-PG12NAB008ME-LC59F66T

更新时间: 2024-11-26 11:08:15
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
65页 10252K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

10-PG12NAB008ME-LC59F66T 数据手册

 浏览型号10-PG12NAB008ME-LC59F66T的Datasheet PDF文件第2页浏览型号10-PG12NAB008ME-LC59F66T的Datasheet PDF文件第3页浏览型号10-PG12NAB008ME-LC59F66T的Datasheet PDF文件第4页浏览型号10-PG12NAB008ME-LC59F66T的Datasheet PDF文件第5页浏览型号10-PG12NAB008ME-LC59F66T的Datasheet PDF文件第6页浏览型号10-PG12NAB008ME-LC59F66T的Datasheet PDF文件第7页 
10-PG12NAB008ME-LC59F66T  
10-PG12NAC008ME-LC69F66T  
datasheet  
flowANPC 1 split  
1200 V / 8 mΩ  
Features  
● Split Advanced NPC topology  
flow 1 12 mm housing  
Ultra-high switching frequency with SiC MOSFETs  
Optimized for 1500 Vdc applications  
● Split topology for better thermal performance  
● No cross-conduction at high frequencies  
LC59F66T  
LC69F66T  
Schematic  
Target applications  
● Solar Inverters  
Types  
● 10-PG12NAB008ME-LC59F66T  
● 10-PG12NAC008ME-LC69F66T  
LC69F66T  
LC59F66T  
1
Copyright Vincotech  
29 Sep. 2020 / Revision 1  

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