Datasheet > 10-PC094PB017ME02-L620F36Y

10-PC094PB017ME02-L620F36Y

更新时间： 2023-09-03 20:36:44

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
26页	10098K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PC094PB017ME02-L620F36Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

H-Bridge Switch - Lo side

Static

r_DS(on)

Drain-source on-state resistance

114

125

150

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Gate charge

0,005

1,7

2,4

3,5

750

300

µA

Ω

1,57

91,2

22,5

Q_g

Q_GS

Q_GD

C_iss

C_oss

C_rss

V_SD

Gate to source charge

-4/15

400

Gate to drain charge

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Diode forward voltage

1980

180

f = 1 Mhz

600

4,8

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink*

0,94

K/W

*Only valid with pre-applied Vincotech thermal interface material.

Dynamic

15,2

14,2

15,2

6,8

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

6,2

R_gon= 2 Ω

R_goff= 2 Ω

47,2

48,4

46,8

11,4

11,8

10,2

0,681

0,607

0,618

0,153

0,101

0,095

t_d(off)

Turn-off delay time

Fall time

125

150

-5/15

600

t_f

125

150

Q_rFWD=1,06 µC

Q_rFWD=1,15 µC

Q_rFWD=1,32 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

16 Feb. 2020 / Revision 2

1 2 345 6 7...26

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