10-PC094PB017ME02-L620F36Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
H-Bridge Switch - Hi side
Static
25
23
28
31
26
rDS(on)
Drain-source on-state resistance
15
114
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,005
25
25
25
1,7
2,4
30
3,5
750
300
V
15
0
0
nA
µA
Ω
0
0
3
1,57
91,2
22,5
36
Qg
QGS
QGD
Ciss
Coss
Crss
VSD
Gate to source charge
-4/15
400
60
25
nC
Gate to drain charge
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
1980
180
12
f = 1 Mhz
0
0
600
0
0
25
25
pF
V
4,8
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,94
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
15,2
14,2
15,2
6,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
6,2
6,2
Rgon = 2 Ω
Rgoff = 2 Ω
47,2
48,4
46,8
11,4
11,8
10,2
0,681
0,607
0,618
0,153
0,101
0,095
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
60
tf
125
150
25
ns
QrFWD=1,06 µC
QrFWD=1,15 µC
QrFWD=1,32 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
6
Copyright Vincotech
16 Feb. 2020 / Revision 2