Datasheet > 10-PC094PB017ME02-L620F36Y

10-PC094PB017ME02-L620F36Y

更新时间： 2023-09-03 20:36:44

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
26页	10098K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PC094PB017ME02-L620F36Y 数据手册

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10ꢀPC094PB017ME02ꢀL620F36Y

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Dynamic

I_RRM

125

150

115

127

Peak recovery current

t_rr

Q_r

Reverse recovery time

125

150

125

150

125

150

125

150

di/dt = 10218 A/ꢁs

1,059

1,150

1,323

0,070

0,120

18427

26726

30513

di/dt = 11319 A/ꢁs ꢀ5/15

di/dt = 11508 A/ꢁs

600

Recovered charge

ꢁC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

16 Feb. 2020 / Revision 2

1...4 5 678 9 10...26

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