Datasheet > 10-PC094PB017ME02-L620F36Y

10-PC094PB017ME02-L620F36Y

更新时间： 2023-09-03 20:36:44

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
26页	10098K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PC094PB017ME02-L620F36Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

H-Bridge Switch - Lo side

V_DSS

Drain-source voltage

900

I_D

Drain current

T_j= T_jmax

T_s= 80 °C

I_DM

E_AS

P_tot

Peak drain current

t_plimited by T_jmax

V_DD= 50 V

T_j= T_jmax

270

Avalanche energy, single pulse

Total power dissipation

Gate-source voltage

I_D= 66

330

T_s= 80 °C

101

V_GSS

-4 / 15

175

T_jmax

Maximum Junction Temperature

°C

H-Bridge Switch - Hi side

V_DSS

Drain-source voltage

900

I_D

Drain current

T_j= T_jmax

T_s= 80 °C

I_DM

E_AS

P_tot

Peak drain current

t_plimited by T_jmax

V_DD= 50 V

T_j= T_jmax

270

Avalanche energy, single pulse

Total power dissipation

Gate-source voltage

I_D= 66

330

T_s= 80 °C

101

V_GSS

-4 / 15

175

T_jmax

Maximum Junction Temperature

°C

Capacitor (DC)

V_MAX

Maximum DC voltage

1000

T_op

Operation Temperature

-55 ... 125

°C

16 Feb. 2020 / Revision 2

123 4 5 6 7...26

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