Datasheet > 10-FY07LBA100S5-PG08J58T

10-FY07LBA100S5-PG08J58T

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
21页	7052K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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10-FY07LBA100S5-PG08J58T

datasheet

Boost Switching Characteristics

figure 20.

FWD

figure 21.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

0,6

0,5

0,4

0,3

0,2

0,1

0,0

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

Q_r

100

125

150

175

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

350

-5/15

125 °C

150 °C

350

-5/15

125 °C

150 °C

T_j:

figure 22.

FWD

figure 23.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

I_RM

100

125

150

175

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

350

-5/15

125 °C

150 °C

350

-5/15

125 °C

150 °C

T_j:

08 Oct. 2023 / Revision 1

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