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10-FE06PPA030SJ04-LJ02B03Z PDF预览

10-FE06PPA030SJ04-LJ02B03Z

更新时间: 2024-10-29 15:19:43
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
32页 8967K
描述
IGBT fast 5us short circuit withstand time High speed switching Low EMI Short tail current

10-FE06PPA030SJ04-LJ02B03Z 数据手册

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10-FE06PPA030SJ04-LJ02B03Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
PFC Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,0003  
30  
25  
3,3  
4
4,7  
V
25  
1,97  
2,25  
2,22(2)  
15  
0
V
125  
650  
0
25  
25  
40  
µA  
nA  
Ω
20  
120  
None  
1800  
45  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
9
VCC = 520 V  
15  
30  
65  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(3)  
Dynamic  
1,39  
K/W  
Rth(j-s)  
25  
14,68  
14,47  
14,12  
5,04  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
6,21  
6,61  
Rgon = 8 Ω  
Rgoff = 8 Ω  
84,2  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
100,34  
103,9  
1,16  
ns  
0/15  
400  
30  
tf  
125  
150  
25  
3,01  
ns  
10,29  
0,295  
0,461  
0,523  
0,153  
0,241  
0,266  
QrFWD=0,456 µC  
QrFWD=1,34 µC  
QrFWD=1,67 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
7
08 Jun. 2023 / Revision 2  

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