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10-F112PMA050M7-P580A79 PDF预览

10-F112PMA050M7-P580A79

更新时间: 2023-09-03 20:39:57
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
29页 8513K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

10-F112PMA050M7-P580A79 数据手册

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10-F112PMA050M7-P580A79  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,005  
50  
25  
5,4  
6
6,6  
V
V
25  
1,55  
1,77  
1,83  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
0,09  
0,5  
mA  
µA  
Ω
20  
None  
10000  
350  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
0
10  
25  
25  
Reverse transfer capacitance  
Gate charge  
130  
VCC = 600 V  
0/15  
50  
380  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,82  
K/W  
25  
176  
176  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
190  
52  
tr  
125  
150  
25  
58  
60  
Rgon = 8 Ω  
Rgoff = 8 Ω  
206  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
229  
ns  
241  
±15  
600  
50  
92,14  
124,72  
122,14  
4,82  
6,38  
6,25  
2,98  
4,25  
5,03  
tf  
125  
150  
25  
ns  
QrFWD=4,93 µC  
QrFWD=7,08 µC  
QrFWD=8,04 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
09 Jun. 2022 / Revision 4  

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