Datasheet > 10-F112PMA050M7-P580A79

10-F112PMA050M7-P580A79

更新时间： 2023-09-03 20:39:57

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	8513K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F112PMA050M7-P580A79

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Brake Diode

V_RRM

Peak repetitive reverse voltage

1200

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

350

610

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

AC Voltage

t_p= 2 s

6000

2500

t_p= 1 min

>12,7

≥ 600

Comparative Tracking Index

*100 % tested in production

CTI

09 Jun. 2022 / Revision 4

1 234 5 6 7...29

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