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10-F1126PA075M7-L829F09 PDF预览

10-F1126PA075M7-L829F09

更新时间: 2023-09-03 20:38:25
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
16页 1652K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

10-F1126PA075M7-L829F09 数据手册

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10-F1126PA075M7-L829F09  
10-P1126PA075M7-L829F09Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,82  
1,96  
1,97  
2,1  
VF  
Forward voltage  
100  
125  
150  
V
Thermal  
phase-change material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
0,90  
K/W  
Dynamic  
25  
75  
77  
78  
IRRM  
125  
150  
25  
Peak recovery current  
A
278  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
432  
459  
ns  
di/dt = 2268 A/μs  
di/dt = 1969 A/μs ±15  
di/dt = 1970 A/μs  
8,539  
13,394  
15,308  
3,195  
5,193  
5,995  
802  
600  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
614  
544  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
4,7  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 426 Ω  
-12  
+11  
200  
2
mW  
mW/K  
K
B(25/50)  
3500  
3560  
B-value  
B(25/100)  
K
Vincotech NTC Reference  
G
Copyright Vincotech  
4
07 Mar. 2017 / Revision 1  

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