Datasheet > 10-F1126PA075M7-L829F09

10-F1126PA075M7-L829F09

更新时间： 2023-09-03 20:38:25

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	1652K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F1126PA075M7-L829F09 数据手册

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10-F1126PA075M7-L829F09

10-P1126PA075M7-L829F09Y

datasheet

Inverter Switching Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(R _g)

E = f(I _C

)

E_on

E_off

105

120

135

150

R_g(Ω)

I_C(A)

25 °C

125 °C

150 °C

25 °C

125 °C

150 °C

With an inductive load at

600

±15

V_CE

V_GE

I _C

600

±15

T_j:

V_CE

V_GE

R _gon

R _goff

figure 3.

FWD

figure 4.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I _c)

E_rec= f(R _g)

E_rec

105

120

135

I_C(A)

150

r_g(Ω)

25 °C

125 °C

150 °C

25 °C

125 °C

150 °C

With an inductive load at

600

±15

600

±15

T_j

V_CE

V_GE

T_j

V_CE

V_GE

I _C

R _gon

07 Mar. 2017 / Revision 1

1...4 5 678 9 10...16

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