Datasheet > 10-F1126PA075M7-L829F09

10-F1126PA075M7-L829F09

更新时间： 2023-09-03 20:38:25

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	1652K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F1126PA075M7-L829F09 数据手册

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10-F1126PA075M7-L829F09

10-P1126PA075M7-L829F09Y

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,0075 25

5,4

6,6

1,55

1,70

1,75

2,05

Collector-emitter saturation voltage

V_CEsat

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

110

500

µA

C_ies

C_oes

C_res

Q_g

16000

480

Output capacitance

Reverse transfer capacitance

Gate charge

190

600

490

Thermal

phase-change

material

λ = 3,4 W/mK

R_th(j-s)

Thermal resistance junction to sink

0,70

K/W

Dynamic

197

208

212

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

203

R_goff= 2 Ω

R_gon= 2 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

125

150

125

150

125

150

233

242

113

±15

600

t_f

111

5,559

7,819

8,496

5,076

6,804

7,285

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 8,5 μC

= 13,4 μC

= 15,3 μC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

E_off

07 Mar. 2017 / Revision 1

1 234 5 6 7...16

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