Datasheet > 10-F006PPA020SB02-M685B3

10-F006PPA020SB02-M685B3

更新时间： 2023-09-03 20:25:05

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	12427K
描述
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching

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10-F006PPA020SB02-M685B3 数据手册

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10-F006PPA020SB02-M685B30

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

600

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

±20

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 360 V

µs

°C

T_jmax

Maximum junction temperature

175

Inverter Diode

V_RRM

Peak repetitive reverse voltage

600

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

PFC Switch

V_CES

Collector-emitter voltage

650

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

150

P_tot

V_GES

Gate-emitter voltage

±20

175

T_jmax

Maximum junction temperature

°C

15 Sep. 2021 / Revision 2

123 4 5 6 7...32

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