Datasheet > 10-EZ126PA080MS-LS17F78T

10-EZ126PA080MS-LS17F78T

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6922K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EZ126PA080MS-LS17F78T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Dynamic

17,72

15,56

15,75

7,65

t_d(on)

Turn-on delay time

125

150

t_r

t_d(off)

t_f

Rise time

125

150

6,97

6,68

R_gon= 4 Ω

R_goff= 4 Ω

44,04

51,06

53,66

18,63

24,96

25,76

0,234

0,223

0,233

0,059

14,11

18,26

20,6

Turn-off delay time

125

150

Fall time

125

150

Q_rFWD=0,096 µC

Q_rFWD=0,237 µC

Q_rFWD=0,29 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

Peak recovery current

Reverse recovery time

Recovered charge

125

150

mWs

E_off

0/18

600

125

150

I_RRM

125

150

12,2

t_rr

125

150

27,46

27,04

0,096

0,237

0,29

di/dt=2162 A/µs

di/dt=2703 A/µs

di/dt=2694 A/µs

Q_r

125

150

μC

0,014

0,072

0,083

3572,19

2220,85

1407,8

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

01 Mar. 2024 / Revision 1

1 2 345 6 7...17

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