Datasheet > 10-EZ126PA080MS-LS17F78T

10-EZ126PA080MS-LS17F78T

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6922K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EZ126PA080MS-LS17F78T

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_DSS

Drain-source voltage

1200

I_D

Drain current (DC current)

Peak drain current

T_j= T_jmax

T_s= 80 °C

I_DM

t_plimited by T_jmax

T_j= T_jmax

P_tot

Total power dissipation

0 / 18

-5 / 22

175

V_GSS

Gate-source voltage

dynamic

T_jmax

Maximum Junction Temperature

°C

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

t_p= 2 s

6000

>12,7

8,74

Comparative Tracking Index

*100 % tested in production

CTI

≥ 600

01 Mar. 2024 / Revision 1

123 4 5 6 7...17

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