Datasheet > 10-EZ126PA080MS-LS17F78T

10-EZ126PA080MS-LS17F78T

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6922K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EZ126PA080MS-LS17F78T

datasheet

Inverter Switch Characteristics

figure 6.

MOSFET

figure 5.

MOSFET

Safe operating area

Transient thermal impedance as a function of pulse width

I_D= f(V_DS

)

Z_th(j-s)= f(t_p)

100

-1

0,5

0,2

-2

0,1

0,01

0,1

0,05

0,02

0,01

0,005

-3

-5

-4

-3

-2

-1

100

1000

10000

_DS(V)

t_p(s)

D =

single pulse

t_p/ T

1,534

T_s=

R_th(j-s)

°C

K/W

V_GS

MOSFET thermal model values

R (K/W)

T_j=

T_jmax

τ (s)

6,63E-02

2,43E-01

8,25E-01

2,87E-01

1,12E-01

3,08E+00

2,20E-01

3,12E-02

3,59E-03

4,04E-04

01 Mar. 2024 / Revision 1

1...4 5 678 9 10...17

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