Datasheet > 10-EY126PA050M7-L196F78T

10-EY126PA050M7-L196F78T

更新时间： 2023-09-03 20:25:24

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3452K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-EY126PA050M7-L196F78T 数据手册

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10-EY126PA050M7-L196F78T

10-E2126PA050M7-L196F78Z

datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I _C= f(V_CE

)

I _C= f(V_CE)

150

V_GE

7 V

8 V

9 V

120

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

120

V_{C E}(V)

t_p

250

μs

25 °C

125 °C

150 °C

t_p

T_j

250

150

μs

°C

V_GE

T_j:

V_GEfrom

7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as function of pulse duration

I _C= f(V_GE

)

Z _th(j-s)= f(t_p)

10⁰

10^-1

0,5

10^-2

0,2

0,1

0,05

0,02

0,01

0,005

10^-3

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t_p(s)

10²

V_{G E}(V)

t_p

100

μs

25 °C

125 °C

150 °C

D =

R _th(j-s)

t_p/ T

V_CE

T_j:

0,77

K/W

IGBT thermal model values

R (K/W)

τ (s)

4,42E-02

9,11E-02

2,73E-01

2,59E-01

6,73E-02

3,15E-02

4,45E+00

9,15E-01

1,28E-01

4,34E-02

6,94E-03

6,91E-04

30 May. 2019 / Revision 4

1 2 3 456 7 8...16

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