Datasheet > 10-EY124PA016ME01-LP49F16T

10-EY124PA016ME01-LP49F16T

更新时间： 2023-09-03 20:36:09

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6673K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY124PA016ME01-LP49F16T

datasheet

H-Bridge Switching Characteristics

figure 11.

MOSFET

figure 12.

MOSFET

Typical switching times as a function of drain current

Typical switching times as a function of MOSFET turn on gate resistor

t = f(I_D)

t = f(R_g)

-1

t_d(off)

-1

t_d(on)

t_f

-2

t_r

t_f

t_r

-2

-3

100

125

I_D(A)

R_g(Ω)

With an inductive load at

T_j=

150

600

-4/15

°C

150

600

-4/15

°C

V_DS

V_GS

R_gon

R_goff

V_GS

I_D

figure 13.

MOSFET

figure 14.

MOSFET

Typical reverse recovery time as a function of drain current

Typical reverse recovery time as a function of MOSFET turn on gate resistor

t_rr= f(I_D)

t_rr= f(R_gon)

0,030

0,025

0,020

0,015

0,010

0,005

0,000

0,040

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

t_rr

100

125

I_D(A)

R_gon(Ω)

V_DS

600

-4/15

600

-4/15

25 °C

V_GS

I_D

125 °C

150 °C

125 °C

150 °C

T_j:

R_gon

05 May. 2023 / Revision 1

1...7 8 91011 12 13...17

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