Datasheet > 10-EY122PA008ME-LU38F08T

10-EY122PA008ME-LU38F08T

更新时间： 2023-09-03 20:38:41

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	6945K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY122PA008ME-LU38F08T

datasheet

Half-Bridge Switching Characteristics

figure 10.

MOSFET

figure 11.

MOSFET

Typical switching times as a function of drain current

Typical switching times as a function of gate resistor

t = f(I_D)

t = f(R_g)

t_d(off)

t_d(on)

t_r

-1

t_d(on)

t_r

t_f

-2

100

150

200

250

300

350

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_D(A)

R_g(Ω)

With an inductive load at

T_j=

150

600

-4/15

°C

150

600

°C

V_DS

V_GS

R_gon

R_goff

V_GS

I_D

-4/15

160

figure 12.

MOSFET

figure 13.

MOSFET

Typical reverse recovery time as a function of drain current

Typical reverse recovery time as a function of turn on gate resistor

t_rr= f(I_D)

t_rr= f(R_gon)

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

0,09

0,08

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

t_rr

100

150

200

250

300

350

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_D(A)

R_gon(Ω)

V_DS

V_GS

V_DS

V_GS

I_D

600

-4/15

600

-4/15

160

25 °C

125 °C

150 °C

125 °C

150 °C

T_j:

R_gon

22 Dec. 2020 / Revision 1

1...6 7 8910 11 12...16

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