Datasheet > 10-EY122PA008ME-LU38F08T

10-EY122PA008ME-LU38F08T

更新时间： 2023-09-03 20:38:41

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	6945K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY122PA008ME-LU38F08T

datasheet

Half-Bridge Switching Characteristics

figure 6.

MOSFET

figure 7.

MOSFET

Typical switching energy losses as a function of drain current

Typical switching energy losses as a function of gate resistor

E = f(I_D)

E = f(R_g)

12,5

10,0

7,5

12,5

10,0

7,5

E_on

E_off

5,0

2,5

0,0

100

150

200

250

300

350

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_D(A)

R_g(Ω)

With an inductive load at

25 °C

V_DS

V_GS

V_DS

V_GS

I_D

600

-4/15

125 °C

150 °C

600

-4/15

160

125 °C

150 °C

T_j:

R_gon

R_goff

figure 8.

MOSFET

figure 9.

MOSFET

Typical reverse recovered energy loss as a function of drain current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_D)

E_rec= f(R_g)

1,2

1,0

0,8

0,6

0,4

0,2

0,0

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_rec

100

150

200

250

300

350

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_D(A)

R_g(Ω)

With an inductive load at

25 °C

V_DS

V_GS

V_DS

V_GS

I_D

600

-4/15

125 °C

150 °C

600

-4/15

160

125 °C

150 °C

T_j:

R_gon

22 Dec. 2020 / Revision 1

1...5 6 789 10 11...16

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