Datasheet > 10-E106PMA020SA-L925A38Z

10-E106PMA020SA-L925A38Z

更新时间： 2024-04-09 19:00:32

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
29页	9563K
描述
IGBT3 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current

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10-E106PMA020SA-L925A38Z 数据手册

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10-E106PMA020SA-L925A38Z

datasheet

Brake Switching Characteristics

figure 51.

FWD

figure 52.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

3500

3000

2500

2000

1500

1000

500

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

3000

2500

2000

1500

1000

500

I_C(A)

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

400

0/15

125 °C

150 °C

400

0/15

125 °C

150 °C

T_j:

figure 53.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

I_{C MAX}

100

200

300

400

500

600

700

_CE(V)

T_j=

150

°C

R_gon

R_goff

19 Dec. 2023 / Revision 1

1...21 22 232425 26 27...29

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