1.5KE62CA

更新时间： 2024-10-27 22:38:11

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
8页	61K
描述
1500 Watt Mosorb Zener Transient Voltage Suppressors

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1.5KE62CA 数据手册

1.5KE6.8CA Series

0.7

0.5

0.3

0.2

PULSE WIDTH

10 ms

0.1

0.07

0.05

1 ms

0.03

0.02

100 µs

10 µs

0.01

0.1

0.2

0.5

50 100

D, DUTY CYCLE (%)

Figure 6. Typical Derating Factor for Duty Cycle

APPLICATION NOTES

RESPONSE TIME

circuit layout, minimum lead lengths and placing the

suppressor device as close as possible to the equipment or

components to be protected will minimize this overshoot.

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitance

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 7.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 8. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. These devices have

excellent response time, typically in the picosecond range

and negligible inductance. However, external inductive

effects could produce unacceptable overshoot. Proper

Some input impedance represented by Z is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 6. Average power must be derated as the lead or

ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 6 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10 µs pulse. However, when the derating factor for a

given pulse of Figure 6 is multiplied by the peak power value

of Figure 1 for the same pulse, the results follow the

expected trend.

http://onsemi.com

1 2 3 456 7 8

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1.5KE62CA 替代型号

型号	品牌	替代类型	描述	数据表
1.5KE62CA-E3/54	VISHAY	功能相似	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transi
1.5KE62CA-T	DIODES	功能相似	1500W TRANSIENT VOLTAGE SUPPRESSOR
1.5KE62CA	LITTELFUSE	功能相似	1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS

与1.5KE62CA相关器件

型号	品牌	获取价格	描述	数据表
1.5KE62CA/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/54	VISHAY	获取价格	Transient Suppressor,
1.5KE62CA/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/60	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/70	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1.5KE62CA/74	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, PLAS

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