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1.5KA16/66 PDF预览

1.5KA16/66

更新时间: 2024-10-28 19:31:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 73K
描述
Trans Voltage Suppressor Diode, 1500W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KA, 2 PIN

1.5KA16/66 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.19
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压:17.6 V最小击穿电压:14.4 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2最高工作温度:185 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:12.9 V表面贴装:NO
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1.5KA16/66 数据手册

 浏览型号1.5KA16/66的Datasheet PDF文件第2页浏览型号1.5KA16/66的Datasheet PDF文件第3页浏览型号1.5KA16/66的Datasheet PDF文件第4页浏览型号1.5KA16/66的Datasheet PDF文件第5页 
1.5KA6.8 thru 1.5KA47A  
Vishay General Semiconductor  
®
PAR Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• T = 185 °C capability suitable for high  
J
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform  
• Excellent clamping capability  
• Very fast response time  
Case Style 1.5KA  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
PRIMARY CHARACTERISTICS  
VBR  
PPPM  
PD  
6.8 V to 47 V  
1500 W  
6.5 W  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
IFSM  
200 A  
TJ max.  
185 °C  
MECHANICAL DATA  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability  
rating  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (fig. 1)  
Peak pulse current at TA = 25 °C with a 10/1000 µs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 100 A (2)  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
Document Number: 88300  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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