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0R8GU41 PDF预览

0R8GU41

更新时间: 2024-10-31 22:08:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 125K
描述
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE

0R8GU41 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.5 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:33 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:0.8 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.1 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

0R8GU41 数据手册

 浏览型号0R8GU41的Datasheet PDF文件第2页浏览型号0R8GU41的Datasheet PDF文件第3页 
0R8GU41  
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE  
0R8GU41  
HIGH SPEED RECTIFIER APPLICATIONS  
(FAST RECOVERY)  
Unit: mm  
l Average Forward Current  
l Repetitive Peak Reverse Voltage  
l Reverse Recovery Time  
l Plastic Mold Type  
: I  
= 0.8A (Ta = 40°C)  
= 400V  
F (AV)  
: V  
RRM  
: t = 100ns (Max)  
rr  
MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
400  
UNIT  
V
Repetitive Peak Reverse Voltage  
V
RRM  
Average Forward Current  
(Ta = 40°C)  
I
0.8  
A
F (AV)  
30 (50H )  
z
Peak One Cycle Surge Forward  
I
A
FSM  
Current (NonRepetitive)  
33 (60H )  
z
JEDEC  
DO41  
Junction Temperature  
T
40~150  
40~150  
°C  
°C  
j
JEITA  
Storage Temperature Range  
T
stg  
TOSHIBA  
Weight: 0.3g  
33C1A  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Peak Forward Voltage  
SYMBOL  
TEST CONDITION  
= 1.0A  
FM  
MIN  
MAX  
UNIT  
V
I
1.5  
50  
V
µA  
FM  
Repetitive Peak Reverse Current  
Reverse Recovery Time  
Forward Recovery Time  
Thermal Resistance  
I
V
= 400V  
RRM  
RRM  
t
I
I
= 1.0A, di / dt = 30A / µs  
100  
200  
115  
45  
ns  
rr  
F
F
t
= 1.0A  
ns  
fr  
R
Junction to Ambient  
Junction to Lead  
°C / W  
°C / W  
th (ja)  
Thermal Resistance  
R
th (j−ℓ)  
MARKING  
1
2002-09-17  

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