Datasheet > 07N70CR-A

07N70CR-A

更新时间： 2024-10-30 06:17:23

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描述
N-CHENNEL Enhancement-mode Power MOSFET

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数据手册

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07N70CR-A 数据手册

SSM07N70CP,R-A

N-channel Enhancement-mode Power MOSFET

Dynamic dv/dt rating

BV_DSS

R_DS(ON)

I _D

675V

1.2Ω

Repetitive Avalanche Rated

Fast Switching

Simple Drive Requirement

DESCRIPTION

The SSM07N70C series is specially designed as a main switching device

for universal 90~265VAC off-line AC/DC converter applications.

Both TO-220 and TO-262 type provide high blocking voltage to overcome

voltage surge and sag in the toughest power system with the best

combination of fast switching,ruggedized design and cost-effectiveness.

TO-220 (P)

The TO-220 and TO-262 packages are widely preferred for all commercial

and industrial applications. The device is well suited for switch-mode

power supplies, AC-DC converters and high-current high-speed switching

circuits.

TO-262 (R)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

675

Units

V_DS

V_GS

± 30

Gate-Source Voltage

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

4.4

0.7

140

P_D@ T_C=25°C

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

W/°C

E_AS

I_AR

Avalanche Current

E_AR

T_STG

T_J

Repetitive Avalanche Energy

Storage Temperature Range

Operating Junction Temperature Range

°C

-55 to 150

THERMAL DATA

Symbol

Parameter

Value

1.4

Unit

Rthj-c

Rthj-a

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

°C/W

3/21/2005 Rev.2.01

www.SiliconStandard.com

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