Datasheet > 06N03

06N03

更新时间： 2024-10-30 02:51:11

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
4页	143K
描述
25V N-Channel Enhancement Mode MOSFET

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06N03 数据手册

PJD06N03

25V N-Channel Enhancement Mode MOSFET

TO-252

FEATURES

• R_DS(ON), V_GS@10V,I_DS@30A=6mΩ

• R_DS(ON), V_GS@4.5V,I_DS@30A=9mΩ

• Advanced trench process technology

• High Density Cell Design For Uitra Low On-Resistance

• Specially Designed for DC/DC Converters and Motor Drivers

• Fully Characterized Avalanche Voltage and Current

• Pb free product : 99% Sn above can meet RoHS environment

substance directive request

MECHANICALDATA

• Case: TO-252 Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : 06N03

Drain

Gate

Source

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_{D S}

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_{G S}

+20

I_D

1 )

Pulsed Drain Current

I_{D M}

280

T_A=25^O

T_A=75^O

62.5

37.5

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J,T_{S T G}

-55 to + 150

^OC

Avalanche Energy with Single Pulse

ID=27A, VDD=25V, L=0.5mH

E_{A S}

180

2.0

^OC/W

Junction-to-Case Thermal Resistance

R_{θ J C}

Junction-to Ambient Thermal Resistance(PCB mounted)²

R_{θ J A}

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

STAD-JUL.19.2006

PAGE . 1

12 3 4

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